An X-band High Efficiency Class-E Power Amplifier Based on GeSi-0.13 μm Process

Based on IBM SiGe 0.13 μm BiCMOS process, a beyond BVceo Class-E design methodology for SiGe HBT power amplifiers is adopted to generate high output power while maintaining high efficiency. SiGe stacked Class-E architecture is also introduced to increase the overall voltage swing with each series stacked device operating in the safe operating area beyond BVceo while its voltage is beyond BVceo, and then we further increase output power of PA. We designed the interstage matching to not only maintain the high breakdown voltage of output stage, but also achieve good power amplifier performance.When it operate at 10 GHz, the power amplifier's peak power add efficiency can reach 47.4%, and the output power is 21.43 dBm.