SHI Guang-yuan, WANG Xin, SUN Yong-bin. The Threshold Voltage Best Design of Power VUMOSFET Devices[J]. Microelectronics & Computer, 2010, 27(6): 131-133.
Citation: SHI Guang-yuan, WANG Xin, SUN Yong-bin. The Threshold Voltage Best Design of Power VUMOSFET Devices[J]. Microelectronics & Computer, 2010, 27(6): 131-133.

The Threshold Voltage Best Design of Power VUMOSFET Devices

  • This article start from the structure of power VUMOSFET, through the use of simulation software SILVACO for process and device simulation, simulation results based on analysis of the device channel doping concentration distribution on the impact of threshold voltage, and process improvement measures put forward.In this paper, power VUMOSFET Design and production guidance.
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