YANG Bin, WANG Xiao-li, LI Dong. Research on the Repair Technology of Embedded Memory[J]. Microelectronics & Computer, 2015, 32(5): 63-67. DOI: 10.19304/j.cnki.issn1000-7180.2015.05.014
Citation: YANG Bin, WANG Xiao-li, LI Dong. Research on the Repair Technology of Embedded Memory[J]. Microelectronics & Computer, 2015, 32(5): 63-67. DOI: 10.19304/j.cnki.issn1000-7180.2015.05.014

Research on the Repair Technology of Embedded Memory

  • In order to overcome the failed embedded memory's influence on the SOC chip, the built in soft repair (BISR) technology which is completed to repair the memory by using the redundant element has been applied. For the disadvantage of BISR, the paper introduces the BIHR technology whose repair signature information is stored in the e-fuse box. By comparing the advantages and disadvantages of separated fuse-box and centralized fuse-box, the paper presents a new structure of centralized fuse-box with reg_bank module. The structure can save 47.88% of the chip area which the separated fuse-box will occupy. And the structure can reduce the decompress time to 26.91%, which the traditional centralized fuse-box will take. The schematic structure has been applied successfully in the product, and it can be widely applied in the soc design.
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