王轩, 刘洁, 赖晓玲, 周国昌, 王倩琼. 一种适用于低压差分信号驱动电路的带隙基准源设计[J]. 微电子学与计算机, 2020, 37(2): 75-79.
引用本文: 王轩, 刘洁, 赖晓玲, 周国昌, 王倩琼. 一种适用于低压差分信号驱动电路的带隙基准源设计[J]. 微电子学与计算机, 2020, 37(2): 75-79.
WANG Xuan, LIU Jie, LAI Xiao-ling, ZHOU Guo-chang, WANG Qian-qiong. A novel design of band-gapreference for LVDS[J]. Microelectronics & Computer, 2020, 37(2): 75-79.
Citation: WANG Xuan, LIU Jie, LAI Xiao-ling, ZHOU Guo-chang, WANG Qian-qiong. A novel design of band-gapreference for LVDS[J]. Microelectronics & Computer, 2020, 37(2): 75-79.

一种适用于低压差分信号驱动电路的带隙基准源设计

A novel design of band-gapreference for LVDS

  • 摘要: 针对低压差分信号驱动电路对共模电压和参考电流的需求,提出了一种新型带隙基准源结构,可在一个基准模块内同时提供带隙基准电压和基准电流.对传统带隙基准进行了改进,优化了基准电压和基准电流的温度特性.仿真结果显示,所设计的基准源电路具有较好的温度特性,在温度范围为-40℃~125℃时,基准电压的温漂系数为17.4 ppm/℃,电流基准的温漂系数为63.3 ppm/℃.作为参考电压与电流基准,可有效保证LVDS信号的稳定性.

     

    Abstract: In order to provide both common mode voltage and current source to Low-Voltage Differential Signaling (LVDS) driver, a novel structure of band gap reference is proposed in this work to provide both voltage reference and current reference with a high performance of temperature characterizes. Bipolar transistors are used in proposed circuit to generate ideal temperature coefficients. The DC simulation shows the voltage temperature coefficient is 17.4 ppm/℃ and current temperature coefficient is 63.3ppm/℃. By using proposed band gap reference, the stability of LVDS can be significantly improved.

     

/

返回文章
返回