Abstract: In order to research the transmission impact of differential crosstalk between interconnects within TSV package; in terms of the through silicon via structure, an improved RLCG parasitic parameter model of adjacent through silicon vias differential crosstalk is proposed, and another RLCG parasitic parameter model of grounding through silicon via is put forward to describe the crosstalk of grounding through silicon via upon adjacent through silicon via; in terms of inter-layer interconnects, the study comes up with an improved RLCG parasitic parameter model of differential crosstalk between adjacent and parallel inter-layer interconnects, as well as an RLCG parasitic parameter model of differential crosstalk between adjacent and vertical inter-layer interconnects. On that basis, the three-dimensional electromagnetic modeling and analysis of real crosstalk among through silicon vias and interconnects is conducted by a means of three-dimensional full-wave HFSS simulation. Single-ended to single-ended and single-ended to differential-ended crosstalk of the RLCG model and HFSS model are analyzed and compared. The results show that the four RLCG models mentioned above are able to describe features of crosstalk between interconnects in the TSV package properly.