刘琳, 赵元富, 岳素格. SEU加固存储单元多节点翻转的准三维数值模拟[J]. 微电子学与计算机, 2010, 27(5): 99-102.
引用本文: 刘琳, 赵元富, 岳素格. SEU加固存储单元多节点翻转的准三维数值模拟[J]. 微电子学与计算机, 2010, 27(5): 99-102.
LIU Lin, ZHAO Yuan-fu, YUE Su-ge. Quasi-Three-Dimensional Simulation of MNU in SEU Hardened Storage Cells[J]. Microelectronics & Computer, 2010, 27(5): 99-102.
Citation: LIU Lin, ZHAO Yuan-fu, YUE Su-ge. Quasi-Three-Dimensional Simulation of MNU in SEU Hardened Storage Cells[J]. Microelectronics & Computer, 2010, 27(5): 99-102.

SEU加固存储单元多节点翻转的准三维数值模拟

Quasi-Three-Dimensional Simulation of MNU in SEU Hardened Storage Cells

  • 摘要: 为了深入了解SEU加固存储单元中多节点翻转的内部电荷收集及电压变化机制,采用准三维模拟工具MEDICI,对DIED加固单元进行器件/电路的混合模拟.结果表明,瞬时浮制节点和电荷的横向扩散是多节点翻转的关键原因.还研究其他加固单元多节点翻转的特点,并给出了避免多节点翻转的方法.

     

    Abstract: We study the interplay of the charge collection and voltage change of multiple-node upset in SEU hardened cell,using the quasi-3D device/ circuit mixed-mode simulation in a DICE cell. The results show the transient floating node and charge lateral diffusion are the key reasons for MNU. We also compare the MNU in other SEU hardened cells,and discuss the methods to avoid MNU.

     

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