Abstract:
A new method for studying the subthreshold characteristics of SOI MOSFETs is presented, which is called regular perturbation method.When the characeristics of SOI MOSFETs is being analyzed, we should consider not only the effect of the ionization impurity, but also the effect of the number and distributing of carriers. The analytical model of the SOI MOSFETs's surface voltage can be obtained by solving non-linear Possion equation with the “regular perturbation method”. The result of the model are verified with the numerical simulation.It can be concluded that the new model is better than the old model which only take account for the effect of the ionization impurity.