Abstract:
A series of intrinsic microcrystalline silicon thin films were deposited by VHF-PECVD technology at different silane concentration and plasma power.The photoelectric property and Raman crystallinity of these thin films were investigated.Results show that the photosensitivity increased and Raman crystallinity decreased as silane concentration increased.And the photosensitivity decreased and Raman crystallinity increased as plasma power decreased.The i-μc-Si:H thin films were used in μc-Si solar cells then the open-circuit voltages were acquired from I-V measurements.Experimental data show that the open-circuit voltage increase as silane concentration increased/plasma power decrease.