刘家楠, 黄鲁. 一种采用斩波调制技术的高精度带隙基准源[J]. 微电子学与计算机, 2016, 33(12): 161-164.
引用本文: 刘家楠, 黄鲁. 一种采用斩波调制技术的高精度带隙基准源[J]. 微电子学与计算机, 2016, 33(12): 161-164.
LIU Jia-nan, HUANG Lu. A High Precision CMOS Bandgap Voltage Reference Source Based on Chopper Technology[J]. Microelectronics & Computer, 2016, 33(12): 161-164.
Citation: LIU Jia-nan, HUANG Lu. A High Precision CMOS Bandgap Voltage Reference Source Based on Chopper Technology[J]. Microelectronics & Computer, 2016, 33(12): 161-164.

一种采用斩波调制技术的高精度带隙基准源

A High Precision CMOS Bandgap Voltage Reference Source Based on Chopper Technology

  • 摘要: 采用TSMC 40 nm CMOS工艺, 设计了一种高精度的CMOS带隙基准源.首先分析带隙基准的误差, 以及误差的消除手段, 然后使用斩波技术和凹口滤波器(notch filter)消除失调电压, 以及减少斩波带来的纹波影响.最后通过蒙塔卡洛仿真表明该基准源在使用斩波技术后3σ精度提高了7.7倍, 达到0.54%.该基准源在-20~125℃的温度范围内温度系数为14×10-6/℃.

     

    Abstract: A high precision CMOS bandgap voltage reference source fabricated in TSMC 40 nm CMOS is presented in this paper. Error source of bandgap and the way to eliminate it are analyzed. By using chopper technology and notch filter, not only offset voltage is removed but also ripple wave caused by chopper technology is lessened. Based on simulation, compared to bandgap without chopper technology, 3σ inaccuracy of the bandgap with chopper technology increased by 7.7 times with a maximum 3σ inaccuracy of 0.54% and a temperature coefficient of 14×10-6/℃.

     

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