一种提升4T-APS像元量子效率的方法

A Method to Improve the Quantum Efficiency of the 4T-APS Pixel

摘要: 通过调整钳位光电二极管P+层掺杂浓度与阈值注入浓度，抑制了4T-APS像元传输管亚阈值漏电，提升了像元的满阱能力与量子效率，并应用TCAD工具进行了仿真验证.结果表明，像元满阱容量可由3500e^-提升至7900e^-，550nm入射光条件下量子效率可提升27.8%.

Abstract: By adjusting concentration of the P+layer in Pinned photodiode and Vt implant,sub-threshold leakage of the transfer gate in CMOS image sensor is reduced,and full well capacity and quantum efficiency of the pixel are improved.Simulation is performed with TCAD tools.The results show that the method is effective.Full well capacity could be raised from 3500e- to 7900e- and quantum efficiency for 550 nm incident light could be increased by 27.8%.