李林, 徐宇, 卢凌云, 贾海涛, 蔡刚, 李悦, 杨海钢. 基于部分重构的SRAM型FPGA单粒子翻转模拟[J]. 微电子学与计算机, 2015, 32(12): 95-99,104.
引用本文: 李林, 徐宇, 卢凌云, 贾海涛, 蔡刚, 李悦, 杨海钢. 基于部分重构的SRAM型FPGA单粒子翻转模拟[J]. 微电子学与计算机, 2015, 32(12): 95-99,104.
LI Lin, XU Yu, LU Ling-yun, JIA Hai-tao, CAI Gang, LI Yue, YANG Hai-gang. Emulation of Single Event Upsets in SRAM-based FPGA Using Partial Reconfiguration Techniques[J]. Microelectronics & Computer, 2015, 32(12): 95-99,104.
Citation: LI Lin, XU Yu, LU Ling-yun, JIA Hai-tao, CAI Gang, LI Yue, YANG Hai-gang. Emulation of Single Event Upsets in SRAM-based FPGA Using Partial Reconfiguration Techniques[J]. Microelectronics & Computer, 2015, 32(12): 95-99,104.

基于部分重构的SRAM型FPGA单粒子翻转模拟

Emulation of Single Event Upsets in SRAM-based FPGA Using Partial Reconfiguration Techniques

  • 摘要: 介绍了一种基于部分重构技术的SRAM型FPGA单粒子翻转模拟方法.针对SRAM型FPGA的单粒子翻转特性,建立了一种能够模拟不同线性能量转移(LET)值和注量率(Flux)重离子入射的故障注入模型.该模拟方法可用于对SRAM型FPGA应用电路采用的抗辐照加固效果进行定量预评估,验证不同加固方案的有效性,同时还可减少辐照试验的次数,降低试验成本.基于Virtex-4 SRAM型FPGA,针对三模冗余(TMR)的单粒子翻转加固方法进行了定量评估.评估试验结果表明,该方法较好地模拟了入射粒子LET值和系统电路失效率之间的关系,验证了三模冗余加固方法的有效性.

     

    Abstract: An emulation method of single event upsets (SEUs) in SRAM-based FPGA by using partial reconfiguration techniques was presented. According to the characteristics of SEUs in SRAM-based FPGA, a fault injection model was built to emulate incident particles with different Linear Energy Transfer (LET) and Flux. Preliminary quantitative evaluation of hardening-by-design techniques can be done with this method, to enhance the effectiveness and pertinence, and reduce the time of radiation ground-testing which means less cost. A design with Triple Module Redundancy (TMR) based on Virtex-4 FPGA was been evaluated, and the result showed that this method emulated the SEE and the failure rate was reduced with TMR.

     

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