王艺燃, 于宗光. 一种flash存储器的灵敏放大器设计[J]. 微电子学与计算机, 2010, 27(11): 147-150.
引用本文: 王艺燃, 于宗光. 一种flash存储器的灵敏放大器设计[J]. 微电子学与计算机, 2010, 27(11): 147-150.
WANG Yi-ran, YU Zong-guang. A Design of Sense Amplifier for Flash Memory[J]. Microelectronics & Computer, 2010, 27(11): 147-150.
Citation: WANG Yi-ran, YU Zong-guang. A Design of Sense Amplifier for Flash Memory[J]. Microelectronics & Computer, 2010, 27(11): 147-150.

一种flash存储器的灵敏放大器设计

A Design of Sense Amplifier for Flash Memory

  • 摘要: 提出一种新型高速低工作电压的嵌入式flash灵敏放大器,该灵敏放大器由一个新型的位线稳压器和一个折叠共射-共基放大电路组成.基于0.13μm标准CMOS单元库的仿真结果表明,该灵敏放大器在-40℃~150℃的温度范围内有快速的读取速度,在最差工作环境下读取时间为17ns,最佳工作环境下为10ns,常温1.2V条件下的读取时间为12.5ns.

     

    Abstract: A new high-speed low-supply voltage sense amplifier, which is composed of a new bit-line voltage regulator and a folded cascode ampligier circuit, is presented. It has been verified that the read speed of the new sense amplifier is fast in temperature range from 一40℃ to 15O℃ by simulation with 0.13μm CMOS models. Simulation results showed a read time of 17ns for the worst case, 10ns for the best case, 12.5ns and the normal temperature/1.2V case, respectively.

     

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