部分耗尽PD CMOS/SOI器件SEU模型分析
Analyses of SEU Model for PD CMOS/SOI
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摘要: 通过计算机模拟分析CMOS/SOI器件中单粒子效应的影响, 采用二维模拟软件MEDICE, 建立了器件发生单粒子效应时内部电荷的分布模型.利用电荷分布模型建立了CMOS/SOI器件在入射不同LET值时的离子与器件中瞬态电流的关系曲线;并建立了离子入射点的不同位置与瞬态电流的关系曲线.从理论上提供了一种分析器件SEU的手段.Abstract: We have investigated the mechanisms of single event effect for CMOS/SOI device and the charge distribution induced by ions strike has been analyzed using a 2D finite element simulation.A model for SEU induced leakage in CMOS/SOI transistors is presented.MEDICI was used to discuss the SEU caused by all kinds of the ions strike.The results of simulation are consistent with the model of charging funnel.