杨洁, 曾云. 一种快速瞬态响应的无片外电容LDO的设计[J]. 微电子学与计算机, 2012, 29(8): 123-126.
引用本文: 杨洁, 曾云. 一种快速瞬态响应的无片外电容LDO的设计[J]. 微电子学与计算机, 2012, 29(8): 123-126.
YANG Jie, CENG Yun. The Design of a Fast Transient Response and Capacitor-free LDO[J]. Microelectronics & Computer, 2012, 29(8): 123-126.
Citation: YANG Jie, CENG Yun. The Design of a Fast Transient Response and Capacitor-free LDO[J]. Microelectronics & Computer, 2012, 29(8): 123-126.

一种快速瞬态响应的无片外电容LDO的设计

The Design of a Fast Transient Response and Capacitor-free LDO

  • 摘要: 基于上华0.5μm工艺,设计了输入电压范围为3.5~6.5V,输出电压为3.3V,最大输出电流为100mA的CMOS无片外电容的低压差线性稳压器.提出了一种自动检测网络用来快速感应负载电流的变化,抑制输出电压的跳变,改善了负载瞬态响应.在稳定性方面,采用miller补偿,加之第二级采用了输出电阻很小的buffer结构1,这样主极点和次极点分离很远使得系统稳定.仿真表明,该LDO在VIN=6.5V和VIN=3.5V下under-shoot分别为156mV和135mV,overshoot分别为145mV和60mV,线性调整率和负载调整率分别为0.023%和0.5%.

     

    Abstract: Based on 0.5 μm process, designed an off-chip capacitor-free CMOS low dropout linear regulator (LDO) the input voltage range is 3.5~ 6.5 V, the output voltage is 3.3 V, maximum output current 100 mA.This LDO use automatic detection of network to sense load current changes rapidly and give inhibition of the output voltage transitions, improving the load transient response.In terms of stability, with miller compensation, couple witj the second stage use a buffer with small output resistance1 make the system achieve stable..The simulation result shows when VIN=6.5 V and VIN=3.5 V, the LDO's undershoot is 156 mV and 135 mV, overshoot is 145 mV and 60 mV, the line regulation and load regulation are 0.023% and 0.5%.

     

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