施敏, 王强, 张士兵, 徐晨. 基于0.5μm CMOS工艺的PFM调制DC-DC升压电路设计[J]. 微电子学与计算机, 2010, 27(5): 27-30.
引用本文: 施敏, 王强, 张士兵, 徐晨. 基于0.5μm CMOS工艺的PFM调制DC-DC升压电路设计[J]. 微电子学与计算机, 2010, 27(5): 27-30.
SHI Min, WANG Qiang, ZHANG Shi-bing, XU Chen. A Design of PFM Boost DC-DC Converter in 0.5μm CMOS Technology[J]. Microelectronics & Computer, 2010, 27(5): 27-30.
Citation: SHI Min, WANG Qiang, ZHANG Shi-bing, XU Chen. A Design of PFM Boost DC-DC Converter in 0.5μm CMOS Technology[J]. Microelectronics & Computer, 2010, 27(5): 27-30.

基于0.5μm CMOS工艺的PFM调制DC-DC升压电路设计

A Design of PFM Boost DC-DC Converter in 0.5μm CMOS Technology

  • 摘要: 采用 CSMC 0.5μm CMOS工艺设计了一种PFM调制DC-DC升压电路,重点分析了基准电压源、比较器、PFM控制电路和过流保护电路.仿真结果表明,该电路具有低电压启动、输出电压精度高、功耗低和过流保护功能等优点.基于0.5μm双层多晶硅三层金属双阱CMOS工艺的几何设计规则实现了其版图.

     

    Abstract: A design of PFM boost DC-DC converter in CSMC 0.5μm CMOS technology is described. The critical parts such as the reference generation, comparator, PFM controlled circuit and over-current protected circuit are analyzed. The simulation results show that it has advantages of low voltage start, high accuracy of ouput voltage, low power dissipation and over-current protection. According to a standard 0.5μm DPTM double wells CMOS process topological design rule of CSMC,the layout of the proposed circuit is realized.

     

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