赵巍颂, 田敏, 钟汇才. 基于ALDAl2O3新型反熔丝器件的可靠性研究[J]. 微电子学与计算机, 2019, 36(1): 41-45.
引用本文: 赵巍颂, 田敏, 钟汇才. 基于ALDAl2O3新型反熔丝器件的可靠性研究[J]. 微电子学与计算机, 2019, 36(1): 41-45.
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ZHAO Wei-song, TIAN Min, ZHONG Hui-cai. Study on Reliability of A New Anti-fuse Device Based on ALD Al2O3[J]. Microelectronics & Computer, 2019, 36(1): 41-45.
Citation: ZHAO Wei-song, TIAN Min, ZHONG Hui-cai. Study on Reliability of A New Anti-fuse Device Based on ALD Al2O3[J]. Microelectronics & Computer, 2019, 36(1): 41-45.
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基于ALDAl2O3新型反熔丝器件的可靠性研究

Study on Reliability of A New Anti-fuse Device Based on ALD Al2O3

    摘要
  • 摘要: 金属-绝缘体-金属(Metal-Insulator-Metal, MIM)反熔丝器件常被用于现场可编程逻辑阵列(Field Programmable Gate Array, FPGA)的互联结构单元.本文使用高介电常数材料Al2O3作为介质层, 使用原子层沉积(Atomic Layer Deposition, ALD)技术, 制备了高可靠性, 高性能的MIM反熔丝单元.该反熔丝单元关态电阻超过1TΩ, 同时开态电阻非常低, 满足正态分布, 集中在22 Ω左右, 波动幅度很小, 标准差仅为3.7 Ω, 因此Al2O3反熔丝器件具有很高的开关比.本文研究了该器件编程前后两种状态的特性及时变击穿特性(Time Dependent Dielectric Breakdown, TDDB).研究结果表明, 在2 V工作电压下, 未编程的反熔丝单元的预测寿命为1591年, 同时, 当读电流在0~20 mA时, 编程后的反熔丝保持稳定.这说明该反熔丝单元在低阻态和高阻态都具有非常高的可靠性.

     

    Abstract: Metal-Insulator-Metal (MIM) antifuse has always been used in Field Programmable Gate Array (FPGA) interconnection structure unit. A High-performance and High-reliability Metal-Insulator-Metal antifuse was fabricated with high κAl2O3 deposited by Atomic Layer Deposition (ALD) as the dielectric. The anti-fuse unit's off-state resistance exceeds 1TΩ, and the on-state resistance is very low, which satisfies the normal distribution, the on-resistance value is concentrated around 22Ω, and the standard deviation is only 3.7Ω, so it has high on/off ratio. In this paper, the Time Dependent DielectricBreakdown (TDDB) of the structure is studied. The results show that the predicted lifetime of the unprogrammed anti-fuse cell is 1591 years at 2V operating voltage. At the same time, when the read current is 0~20mA, the programmed anti-fuse remains stable. This shows that the antifuse has a very high reliability in both low-impedance and high-impedance states.

     

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