单粒子瞬态脉冲宽度量化与自测试电路设计
Test Circuit of Pulse Width Measurement and Self-Test for Single-Event Transient
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摘要: 为了研究组合逻辑中单粒子瞬态(Single-Event Transient,SET)的特性,采用片上测量技术提出了一套SET脉冲宽度测量方案.针对SET脉冲特性,设计了一种基于自主触发的脉冲测量电路,提出了一种用于自测试验证的脉冲激励电路.基于本所350nm SOI工艺,完成了一款集脉冲收集、测量、自测试于一体的SET重离子辐射测试芯片.通过仿真分析,验证了该方案的有效性.此方案为其他深亚微米工艺下SET研究提供了参考.Abstract: A scheme for on-chip measuring pulse width of single-event transient (SET) has been implemented in our350 nm silicon-on-insulator technology in order to research the characteristics of SET in combinational circuit.A pulse measurement circuit basing on autonomous detection technology is designed.A pulse generation circuit that used for chip self-tests and verification is proposed.The simulation results indicate the availability of this scheme,and provide some references for other deep sub-micron processes.
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