陈志强, 潘兰芳, 吴秀山, 吴晓波. SRAM泄漏功耗分析和估算[J]. 微电子学与计算机, 2010, 27(11): 77-81.
引用本文: 陈志强, 潘兰芳, 吴秀山, 吴晓波. SRAM泄漏功耗分析和估算[J]. 微电子学与计算机, 2010, 27(11): 77-81.
CHEN Zhi-qiang, PAN Lan-fang, WU Xiu-shan, WU Xiao-bo. Leakage Power Analysis and Estimation in SRAMs[J]. Microelectronics & Computer, 2010, 27(11): 77-81.
Citation: CHEN Zhi-qiang, PAN Lan-fang, WU Xiu-shan, WU Xiao-bo. Leakage Power Analysis and Estimation in SRAMs[J]. Microelectronics & Computer, 2010, 27(11): 77-81.

SRAM泄漏功耗分析和估算

Leakage Power Analysis and Estimation in SRAMs

  • 摘要: SRAM的泄漏功耗是超大规模集成电路设计中需要满足的一个重要指标,对SRAM泄漏功耗的估算也是设计中需要解决的一个重要问题.通过分析SRAM的结构组成,建立各组成部分在不同工作状态下的泄漏功耗模型,利用建立模型进行功耗估算.仿真结果表明,建立的模型能够对不同尺寸的SRAM的泄漏功耗进行快速的估算,而且误差可以接受.

     

    Abstract: Leakage power of SRAM is important index to meet in VLSI design, and the leakage power analysis and estimation is a problem to solve. Under analyzing the operation theory of SRAMs, some power models were established for each part of the SRAMs which playing different roles in various operational phases.The simulation result shows the leak-age power of SRAM could be estimated quickly basing on the presented model and the deviation is smal1.

     

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