一种具有锁定检测结构的新型抗SET效应DLL设计技术
A New SET-Tolerant Radiation-Hardened DLL Design with Lock Detector
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摘要: 针对延迟锁相环的结构和对单粒子效应敏感性的分析, 提出了一种具有锁定检测结构的新型抗SET加固DLL结构, 该结构能在满足原有DLL性能指标的前提下实现对SET效应的加固, 保证DLL正交四相时钟的正确输出.基于65 nm CMOS工艺进行电路设计仿真, 结果显示在500 MHz工作频率下, 此DLL功能正确, 抗SET性能良好, SET阈值达到100 MeV·cm2/mg, 在空间辐射环境中具有很好的稳定性.Abstract: This paper presents a new radiation-hardened by design DLL in 65 nm CMOS fabrication process.The proposed DLL uses a lock detector to avoid the lock error and phase error in SET (Single-event Transient) response.The simulation results demonstrate that the proposed DLL can generate quadrature phase clock in a 500 MHz with high reliability and the SET threshold is better than 100 MeV·cm2/mg, has great stability in space.
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