吴梦雯, 甘朝晖, 吴宇鑫. 一种基于压控型忆阻器的忆容器模型[J]. 微电子学与计算机, 2015, 32(11): 166-171.
引用本文: 吴梦雯, 甘朝晖, 吴宇鑫. 一种基于压控型忆阻器的忆容器模型[J]. 微电子学与计算机, 2015, 32(11): 166-171.
WU Meng-wen, GAN Zhao-hui, WU Yu-xin. A Memcapacitor Model Based on Voltage-controlled Memristor[J]. Microelectronics & Computer, 2015, 32(11): 166-171.
Citation: WU Meng-wen, GAN Zhao-hui, WU Yu-xin. A Memcapacitor Model Based on Voltage-controlled Memristor[J]. Microelectronics & Computer, 2015, 32(11): 166-171.

一种基于压控型忆阻器的忆容器模型

A Memcapacitor Model Based on Voltage-controlled Memristor

  • 摘要: 分析了忆阻器与忆容器之间的关系,提出了基于电压控制型忆阻器的忆容器模型.用Pspice软件对该模型进行了仿真实验,发现该模型中忆容器的忆容值与忆阻器的忆阻值成线性关系,忆容器的电压-电荷曲线呈现典型的非线性迟滞回线特性.在验证了所提出忆容器模型正确性的基础上,进一步分析了忆容器的电气特性.

     

    Abstract: In this paper,a model for transferring a voltage-controlled memristor into memcapacitor is described, of which the realization is on the basis of an analysis of the relationship between memristor and memcapacitor. Results of Pspice simulation indicate that:in the model the relationship between memristance and memcapacitance is linear,and the v-q characteristic of the memcapacitor is a typically non-linear pinched hysteretic loop. After conforming the correctness of the model, a further Pspice simulation is conducted in order to analyze and observe the characteristics of memcapactor.

     

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