许小丽, 冯全源. 一种高温度性能的CMOS带隙基准源[J]. 微电子学与计算机, 2010, 27(1): 25-28.
引用本文: 许小丽, 冯全源. 一种高温度性能的CMOS带隙基准源[J]. 微电子学与计算机, 2010, 27(1): 25-28.
XU Xiao-li, FENG Quan-yuan. A Piecewise-Line Compensated CMOS Bandgap Reference[J]. Microelectronics & Computer, 2010, 27(1): 25-28.
Citation: XU Xiao-li, FENG Quan-yuan. A Piecewise-Line Compensated CMOS Bandgap Reference[J]. Microelectronics & Computer, 2010, 27(1): 25-28.

一种高温度性能的CMOS带隙基准源

A Piecewise-Line Compensated CMOS Bandgap Reference

  • 摘要: 提出了一种正负温度系数电流产生电路, 使用分段线性温度补偿技术用于传统的电流模式基准电路中, 改善CMOS带隙基准电路在宽温度范围内的温度漂移.采用0.18μm CMOS混合信号工艺, 对该电路进行了设计.在1.8V的电源电压条件下, 基准输出电压为0.801 V, 温度系数在-40℃-125℃范围内可达到2.7ppm/℃, 电源电压从1.5V变化到3.3V的情况下, 带隙基准的输入电压调整率为1.2 mV/V.

     

    Abstract: This paper presents a positive-negative temperature coefficient current generator, which is added to a traditional current mode reference circuit, so that Piecewise-Linear temperature Compensated technique can be used to improve the temperature drift of CMOS bandgap reference circuit within wider temperature range.The proposed circuit is designed by 0.18μm CMOS mix-signal technology.Under the supply voltage of 1.8V, the proposed bandgap reference provides an output voltage of is 0.801V.A temperature coefficient of 2.7ppm / ℃ from-40 ℃ to125 ℃ can be achieved, and line regulation of 1.2 mV/V from1.5V to3.3V.

     

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