李栋, 刘文平, 张冰, 李炘, 何杰. CMOS图像传感器4T像素本底噪声分析[J]. 微电子学与计算机, 2014, 31(3): 138-141.
引用本文: 李栋, 刘文平, 张冰, 李炘, 何杰. CMOS图像传感器4T像素本底噪声分析[J]. 微电子学与计算机, 2014, 31(3): 138-141.
LI Dong, LIU Wen-ping, ZHANG Bing, LI Xin, HE Jie. Analysis of Noise Floor for 4T Pixel in CMOS Image Sensor[J]. Microelectronics & Computer, 2014, 31(3): 138-141.
Citation: LI Dong, LIU Wen-ping, ZHANG Bing, LI Xin, HE Jie. Analysis of Noise Floor for 4T Pixel in CMOS Image Sensor[J]. Microelectronics & Computer, 2014, 31(3): 138-141.

CMOS图像传感器4T像素本底噪声分析

Analysis of Noise Floor for 4T Pixel in CMOS Image Sensor

  • 摘要: 为了抑制本底噪声,提高图像动态范围,首先给出CMOS图像传感器的4T像素结构,分析该结构下的基本噪声源.然后,分别讨论了各本底噪声分量的形成及对信号的影响,并以噪声电子数的形式对各噪声分量进行了定量分析,提出了相应的噪声抑制措施,且进行了仿真验证.

     

    Abstract: To suppress the noise floor and enhance the dynamic range,firstly,the structure of 4T pixel is shown,which of the basic noise is analyzed.Then the influence to signal and emergence of the kinds of noise floor are discussed,and the kinds of noise is quantitatively analyzed in the form of noise electrons.Finally the measures to suppress noise are put forward,which are verified by the simulation.

     

/

返回文章
返回