一种应用于物联网的高效率D类射频功放设计
A High PAE RF COMS Power Amplifier for IOT Applications
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摘要: 基于UMC 65 nm工艺,设计了一款适用于物联网系统的射频D类功率放大器.电路采用DC-DC降压变换器对功率放大电路进行电源调制,并通过可变输出阻抗匹配网络来获得两个不同的等效负载阻抗,实现了输出功率的大范围可调,并保证了在整个输出范围内的高效率.仿真结果表明,采用1.2 V供电电压,电路在780 MHz频率下输出范围达-0.2~9.1 dBm,且功率附加效率(PAE)均在60%以上.Abstract: In this paper, a 780 MHz high PAE Class D RF CMOS power amplifier with tunable output power in a standard 65 nm COMS process is presented for IOT applications. A DC-DC buck converter is introduced to modulate the supply voltage of the PA while a tunable output matching network is employed to provide two different equivalent load resistances to adjust the output power. Simulation results indicate that the proposed power amplifier provides output power from -0.2 dBm to 9.1 dBm and the PAE higher than 60% at 1.2 V power supply.