Abstract: Ferroelectric random access memory (FRAM) is a promising candidate for future data storage in space missions. Its radiation effects need to be well characterized for practical applications. A heavy-ion accelerator was utilized to study the single event effect (SEE) of a 1 Mbit FRAM. The different types and mechanisms of SEE on FRAM is analyzed. Both the static mode and dynamic mode were used for the test. The linear energy transfer (LET) threshold and the cross section of the single event upset (SEU) were tested, as well as the LET threshold of the single event latchup (SEL). The results provide references for the future space application and hardened design of FRAM.