硅基三维集成射频无源器件及电路研究进展

朱樟明; 尹湘坤; 刘晓贤; 杨银堂

doi:10.19304/J.ISSN1000-7180.2022.0687

硅基三维集成射频无源器件及电路研究进展

doi: 10.19304/J.ISSN1000-7180.2022.0687

西安电子科技大学微电子学院, 陕西西安 710071

基金项目: 国家重点研发计划资助项目（2022YFB4401303）

详细信息

作者简介:
朱樟明：男,（1978- ）,教授,博士生导师. 研究方向为模拟前端集成电路与集成系统

刘晓贤：女,（1988- ）,副教授,硕士生导师. 研究方向为射频集成电路与系统

杨银堂：男,（1962- ）,教授,博士生导师. 研究方向为三维集成微系统

通讯作者:
男,（1983- ）,副研究员,硕士生导师. 研究方向为射频集成电路及三维微系统. E-mail：yinxkcn@163.com

中图分类号: TN305;TN405
计量
- 文章访问数: 96
- HTML全文浏览量: 40
- PDF下载量: 12
- 被引次数: 0
出版历程
- 收稿日期: 2022-10-31
- 修回日期: 2022-11-21
- 网络出版日期: 2023-01-18

Research progress of silicon-based 3D integrated RF passive devices and circuits

School of Microelectronics, Xidian University, Xi’an 710071, China

摘要

摘要:
射频电路在移动通信终端和雷达前端等电子系统中占据了较大比例的面积和体积,且现有射频集成方式无法实现无源电路的微型化、多功能化、一体化系统集成,成为系统小型化集成、性能提升的瓶颈,更制约了各种电子设备和通信系统的发展. 基于硅通孔的三维集成技术可以实现硅基电路的多层堆叠,在实现高密度、高性能、微型化的射频系统方面具有巨大发展潜力和广阔应用前景. 本文介绍了基于硅基三维集成技术实现的射频无源器件及电路的研究进展,主要包括无源电容、电感、天线、滤波器、功分器、耦合器、巴伦. 最后,对各类射频无源器件及功能电路模块的发展现状和趋势进行了总结和展望.
- 三维集成电路 /
- 射频 /
- 无源器件 /
- 无源电路 /
- 硅通孔
Abstract:
RF circuit occupies a large proportion in the mobile communication terminal and the radar front-end electronic system such as the area and volume. The existing radio frequency (RF) integration methods cannot realize the miniaturization, multi-function and integrated RF passive system, which becomes the bottleneck of system miniaturization integration and performance improvement, and restricts the development of various electronic devices and communication systems. Based on the development of Through-Silicon Via (TSV) technology, three-dimensional (3D) stacking of silicon-based circuit can be realized, which has great potential and application prospects in realizing high-density, superior-performance and miniaturized RF integrated systems. In this paper, the latest research progress of main RF passive devices and passive circuits based on silicon-based 3D integration technology is introduced, mainly including capacitor, inductor, antenna, filter, power splitters, couplers and baluns. Finally, the research status and development trends of various RF devices and functional circuit modules are summarized and prospected.
- Three-dimensional integrated circuit (3D IC) /
- radio frequency (RF) /
- passive device /
- passive circuit /
- through-silicon via (TSV)

HTML全文

图 1 硅基三维集成的射频系统架构

Figure 1. Architecture of silicon-based 3D integrated RF system

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图 2 基于TSV的三维集成电容器的制作工艺

Figure 2. Manufacturing process of TSV-based 3D capacitor

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图 3 基于TSV的三维集成螺旋电感器

Figure 3. Perspective view of TSV-based solenoid inductor

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图 4 使用TSV馈电的三维集成天线

Figure 4. 3D integrated antenna fed by TSV

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图 5 基于TSV的三维集成滤波器

Figure 5. Architecture of TSV-based 3D integrated filter

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图 6 基于TSV的三维集成双频功率分配器

Figure 6. Top view of TSV-based 3D integrated dual frequency power divider

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图 7 基于TSV的三维集成巴伦

Figure 7. Architecture of TSV-based 3D integrated Balun

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图 8 基于TSV的集总参数分支线耦合器

Figure 8. Architecture of TSV-based lumped parameter branch line coupler

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