金宁彬,文进才.基于65 nm CMOS工艺的毫米波正交上变频混频器设计[J]. 微电子学与计算机,2023,40(2):146-154. doi: 10.19304/J.ISSN1000-7180.2022.0377
引用本文: 金宁彬,文进才.基于65 nm CMOS工艺的毫米波正交上变频混频器设计[J]. 微电子学与计算机,2023,40(2):146-154. doi: 10.19304/J.ISSN1000-7180.2022.0377
JIN N B,WEN J C. Design of millimeter wave IQ up-conversion mixer based on 65 nm CMOS process[J]. Microelectronics & Computer,2023,40(2):146-154. doi: 10.19304/J.ISSN1000-7180.2022.0377
Citation: JIN N B,WEN J C. Design of millimeter wave IQ up-conversion mixer based on 65 nm CMOS process[J]. Microelectronics & Computer,2023,40(2):146-154. doi: 10.19304/J.ISSN1000-7180.2022.0377

基于65 nm CMOS工艺的毫米波正交上变频混频器设计

Design of millimeter wave IQ up-conversion mixer based on 65 nm CMOS process

  • 摘要: 针对射频发射机中镜像干扰信号难以滤除的问题,基于65 nm CMOS工艺设计了一款应用于5G毫米波通信的宽带正交上变频混频器. 电路核心部分采用了改进的吉尔伯特混频器结构,通过电流复用跨导级和负阻技术来提高混频器的转换增益. 在混频器射频输出端,基于变压器巴伦,设计了面积小、结构简单的信号合成电路,用于四路射频信号到单端信号的转换以及输出端阻抗匹配. 同时,在本振输入端,设计了差分正交耦合器生成四路正交本振信号. 仿真结果显示,正交上变频混频器电路在35~45 GHz频率范围内,实现了最大4.53 dB的转换增益. 输出1 dB压缩点达到3.25 dBm,镜像抑制度在20 dB以上,本振到射频的端口隔离度在27 dB以上. 无源电路的小型化设计使得芯片的总面积仅为0.327 mm2. 在1.2 V的直流偏置电压下,芯片功耗仅为28.6 mW.

     

    Abstract: Aiming at the problem that image interference signal is difficult to filter, a broadband IQ up-conversion mixer applied to 5G millimeter wave communication is designed based on 65 nm CMOS process. In the core of the circuit, an improved Gilbert mixer structure is used to achieve high conversion gain through current multiplexing transconductance stage and negative resistance technology. At the output end of mixer, a signal synthesis circuit with small area and simple structure is designed based on the transformer balun. At the same time, a differential orthogonal coupler is used to generate four orthogonal LO signals. Simulation results show that the IQ up-conversion mixer circuit achieves a maximum conversion gain of 4.53 dB. The OP1 dB is 3.25 dBm, the image reject ratio is above 20 dB, and the LO to RF isolation is greater than 27 dB. The miniaturization of the passive circuit makes the total area of the chip only 0.327 mm2. The power consumption of the chip is only 28.6 mW from a 1.2 V supply.

     

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