国千崧, 马侠, 王美玉, 冯景彬, 肖知明, 胡伟波. 一种高精度BJT温度传感器的设计[J]. 微电子学与计算机, 2022, 39(7): 108-114. DOI: 10.19304/J.ISSN1000-7180.2022.0059
引用本文: 国千崧, 马侠, 王美玉, 冯景彬, 肖知明, 胡伟波. 一种高精度BJT温度传感器的设计[J]. 微电子学与计算机, 2022, 39(7): 108-114. DOI: 10.19304/J.ISSN1000-7180.2022.0059
GUO Qiansong, MA Xia, WANG Meiyu, FENG Jingbin, XIAO Qiansong, HU Weibo. Design of a high accuracy BJT-based temperature sensor[J]. Microelectronics & Computer, 2022, 39(7): 108-114. DOI: 10.19304/J.ISSN1000-7180.2022.0059
Citation: GUO Qiansong, MA Xia, WANG Meiyu, FENG Jingbin, XIAO Qiansong, HU Weibo. Design of a high accuracy BJT-based temperature sensor[J]. Microelectronics & Computer, 2022, 39(7): 108-114. DOI: 10.19304/J.ISSN1000-7180.2022.0059

一种高精度BJT温度传感器的设计

Design of a high accuracy BJT-based temperature sensor

  • 摘要: 基于CMOS工艺,提出并实现了一种高精度的基于双极晶体管(BJT)的温度传感器,其由模拟前端和放缩式模数转换器(Zoom ADC)构成.模拟前端由偏置电路、感温电路和数字控制电路构成.其中,在偏置电路中加入了斩波器(Chopper), 并用低通滤波器滤除其纹波,降低了电路的噪声,提升了感温精度。为实现对模拟前端输出结果准确的数字化,采用了放缩式模数转换器,其融合了基于逐次逼近(SAR)的粗转换和基于Σ-Δ的细转换.首先,由5-bit SAR ADC对于模拟前端的输出进行粗量化,随后,再由Σ-ΔADC对经过粗量化后的剩余电压进行细量化.该结构能够在较低的功耗下,实现高精度和高线性度.在110nm CMOS工艺下实现该温度传感器,以验证上述结构的有效性,芯片的面积为0.18mm2.测试结果表明,该温度传感器,在3V供电电压和-45~+85℃的温度范围内,实现了±0.25℃的转换误差,过采样率为128倍,转换时间为4ms,电路功耗为12.3μA.

     

    Abstract: A high accuracy BJT-based temperature sensor is proposed and realized on a CMOS technology. It consists of an analog-front-end (AFE) and a zoom ADC. The AFE consists of bias circuits, a temperature sensor and digital control circuits. Chopper is applied in the front-end circuit. Ripples caused by the chopper are removed by low-pass filter. Chopper and the low-pass filter remove low frequency noises and improve accuracy of temperature sensing. To achieve precision digitization to AFE's outputs, the zoom ADC combines including successive approximation register (SAR) coarse conversion and sigma-delta fine conversion is applied. A 5-bit SAR ADC accomplishes coarse conversion to the AFE outputs at first. Then, fine conversion is done by Σ-ΔADC to quantize the residue voltage after coarse conversion. This structure achieves high accuracy and linearity with low power. To verify the proposed design, the temperature sensor is achieved on a 110 nm CMOS, and occupies 0.18mm2. It achieves inaccuracy of ±0.25℃ from -45℃ to +85℃ with conversion time of 4 ms, and the oversampling rate is 128. It draws 12.3μA from a 3V supply.

     

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