南岚, 王英武, 王永杰, 王凯, 王俊峰. 一种基于GaN器件的兆赫兹DC/DC变换器设计[J]. 微电子学与计算机, 2022, 39(8): 127-134. DOI: 10.19304/J.ISSN1000-7180.2021.1298
引用本文: 南岚, 王英武, 王永杰, 王凯, 王俊峰. 一种基于GaN器件的兆赫兹DC/DC变换器设计[J]. 微电子学与计算机, 2022, 39(8): 127-134. DOI: 10.19304/J.ISSN1000-7180.2021.1298
NAN Lan, WANG Yingwu, WANG Yongjie, WANG Kai, WANG Junfeng. A design of MHz DC/DC converter based on GaN[J]. Microelectronics & Computer, 2022, 39(8): 127-134. DOI: 10.19304/J.ISSN1000-7180.2021.1298
Citation: NAN Lan, WANG Yingwu, WANG Yongjie, WANG Kai, WANG Junfeng. A design of MHz DC/DC converter based on GaN[J]. Microelectronics & Computer, 2022, 39(8): 127-134. DOI: 10.19304/J.ISSN1000-7180.2021.1298

一种基于GaN器件的兆赫兹DC/DC变换器设计

A design of MHz DC/DC converter based on GaN

  • 摘要: 当前中低压输入军用高可靠DC/DC电源模块普遍采用Si基功率开关,典型输入电压28 V、开关频率500 kHz,随着模块电源小型化发展、开关频率不断提升,开关损耗大幅增加,严重影响电源转换效率.软开关技术的应用可以大幅降低高频化带来的开关损耗,然而软开关控制线路结构复杂,在军用高可靠领域中目前尚无可用的高端集成控制器.GaN器件具有极低的栅电荷、输出电容以及零反向恢复电荷特性,在不增加线路复杂度的前提下可有效降低高频应用带来的开关损耗,这一点在消费电子领域AC/DC变换器中取得成功应用.然而在中低压输入军用高可靠电源模块中,随着母线电压大幅降低和开关频率的提升,GaN器件的高速特性能否有效降低开关损耗提升转换效率还有待验证.本文采用单端反激功率拓扑、同步整流技术设计了一款典型输入28 V、输出5V/30W、开关频率1 MHz的原理样机,通过对单元电路损耗的定量分析和测试验证,获得了GaN器件与Si基器件在1 MHz开关频率下的损耗与效率曲线,得出中低压高频条件下,使用GaN器件的转换效率相比Si基器件提升4%,并且功率开关的电压应力控制在合理范围内.对于军用高可靠领域中低压输入DC/DC变换器小型化、高频化发展具有重要意义.

     

    Abstract: At present, high-reliability DC/DC power supply modules with medium and low voltage input generally use Si-based power switches, with a typical input voltage of 28V and a switching frequency of 500kHz. With the development of miniaturization of module power supply and the continuous increase of switching frequency, the switching loss increases greatly, which seriously affects the power conversion. efficient. The application of soft-switching technology can greatly reduce the switching loss caused by high frequency. However, the structure of the soft-switching control circuit is complex, and there is currently no high-end integrated controller available in the military high-reliability field. GaN devices have extremely low gate charge, output capacitance and zero reverse recovery charge characteristics, which can effectively reduce switching losses caused by high-frequency applications without increasing circuit complexity. successful application in the device. However, in the medium and low voltage input military high-reliability power modules, with the substantial reduction of bus voltage and the increase of switching frequency, whether the high-speed characteristics of GaN devices can effectively reduce switching losses and improve conversion efficiency remains to be verified. In this paper, a single-ended flyback power topology and synchronous rectification technology are used to design a principle prototype with a typical input of 28V, output of 5V/30W, and a switching frequency of 1MHz. The loss and efficiency curve of the base device at a switching frequency of 1MHz shows that under the condition of medium and low voltage and high frequency, the conversion efficiency of the GaN device is improved by 4% compared with the Si-based device, and the voltage stress of the power switch is controlled within a reasonable range. It is of great significance for the miniaturization and high frequency development of medium and low voltage input DC/DC converters in the field of military high reliability.

     

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