曹喜涛, 郭仲杰, 韩晓, 刘申, 苏昌勖, 李晨. 一种超低功耗欠压锁定电路设计与实现[J]. 微电子学与计算机, 2022, 39(1): 107-112. DOI: 10.19304/J.ISSN1000-7180.2021.0682
引用本文: 曹喜涛, 郭仲杰, 韩晓, 刘申, 苏昌勖, 李晨. 一种超低功耗欠压锁定电路设计与实现[J]. 微电子学与计算机, 2022, 39(1): 107-112. DOI: 10.19304/J.ISSN1000-7180.2021.0682
CAO Xitao, GUO Zhongjie, HAN Xiao, LIU Shen, SU Changxu, LI Chen. Design and implementation of an ultra-low power under voltage lockout circuit[J]. Microelectronics & Computer, 2022, 39(1): 107-112. DOI: 10.19304/J.ISSN1000-7180.2021.0682
Citation: CAO Xitao, GUO Zhongjie, HAN Xiao, LIU Shen, SU Changxu, LI Chen. Design and implementation of an ultra-low power under voltage lockout circuit[J]. Microelectronics & Computer, 2022, 39(1): 107-112. DOI: 10.19304/J.ISSN1000-7180.2021.0682

一种超低功耗欠压锁定电路设计与实现

Design and implementation of an ultra-low power under voltage lockout circuit

  • 摘要: 集成电路的低功耗、高集成度已经成为发展趋势.传统的欠压锁定电路需要外部电路提供带隙基准电压和偏置电流,电路结构复杂;同时,当发生欠压锁定,关断芯片时,却要保证带隙基准电路始终正常工作,不利于芯片功耗的降低.针对传统欠压锁定电路结构的缺点,设计了一种基于三极管的欠压锁定电路,不需要外部电路提供基准电压和偏置电流,电路结构简单,响应速度快.基于三极管的欠压锁定电路的阈值受PVT影响较小,而且功耗低。基于0.18 μmBCD工艺进行了全面的仿真验证,结果表明,当电源电压下降时,电路在电源电压小于2.06 V时系统关闭,避免当电源电压过低时导致数字逻辑发生错误以及器件损坏;当电源电压上升时,电路在电源电压大于2.38 V时系统重新启动.为避免芯片在欠压锁定阈值附近来回翻转,设计的欠压保护迟滞量为320 mV,防止误操作。在-40~85℃温度范围内欠压锁定阈值电压精度为1.36%,功耗仅为22 μW.

     

    Abstract: With the development trend of low power consumption and high integration of integrated circuits, the traditional under-voltage lockout circuit needs the external circuit to provide the bandgap reference voltage and bias currentand thecircuit structure is complicated. At the same time, when the under-voltage lockout occurs, the chip is turned off, the bandgap reference circuit should always work normally, which is not conducive to the reduction of chip power consumption. Aiming at the shortcomings of the traditional circuit structure, a triode-based under-voltage lockout circuit is designed. It does not require an external circuit to provide reference voltage and bias current. The circuit structure is simple and the response speed is fast. The threshold of the triode-based under-voltage lockout circuit is lessaffected by PVTand the power consumption is low. Based on the 0.18 μmBCD process, the simulation results show that when the power supply voltage drops, the circuit will shut down when the power supply voltage is less than 2.06 V, so as to avoid digital logic errors and device damagewhen the power supply voltage is too low. When the power supply voltage rises, the circuit restarts when the power supply voltage is greater than 2.38 V. In order to prevent the chip from flipping back and forth near the under-voltage lockout threshold, the under-voltage protection hysteresis is 320mV to prevent misoperation.The undervoltage locking threshold voltage accuracy is 1.36% in the temperature range from -40 ℃ to 85℃, , and the power consumption is only 22 μW.

     

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