张超权, 郭本青, 李珂, 李磊, 周婉婷. 一种CMOS低噪声有源下变频混频器[J]. 微电子学与计算机, 2022, 39(1): 101-106. DOI: 10.19304/J.ISSN1000-7180.2021.0661
引用本文: 张超权, 郭本青, 李珂, 李磊, 周婉婷. 一种CMOS低噪声有源下变频混频器[J]. 微电子学与计算机, 2022, 39(1): 101-106. DOI: 10.19304/J.ISSN1000-7180.2021.0661
ZHANG Chaoquan, GUO Benqing, LI Ke, LI Lei, ZHOU Wanting. A CMOS low-noise active down-conversion mixer[J]. Microelectronics & Computer, 2022, 39(1): 101-106. DOI: 10.19304/J.ISSN1000-7180.2021.0661
Citation: ZHANG Chaoquan, GUO Benqing, LI Ke, LI Lei, ZHOU Wanting. A CMOS low-noise active down-conversion mixer[J]. Microelectronics & Computer, 2022, 39(1): 101-106. DOI: 10.19304/J.ISSN1000-7180.2021.0661

一种CMOS低噪声有源下变频混频器

A CMOS low-noise active down-conversion mixer

  • 摘要: 提出了一种采用电流源开关的低噪声开关跨导有源下变频混频器.使用正弦波本振大信号驱动可以避免因为脉冲本振谐波诱发的噪声叠加效应;利用LC谐振结构来缓解尾节点寄生电容充电和放电对电路高频工作时的限制.提出的混频器采用65 nm CMOS工艺实现,工作在5.2 GHz的RF频段下,最大转换增益为11.6 dB, 输入三阶交调截取点(IIP3)为5.5 dBm。对于5.2 GHz的LO频率点,分别在fIF=10/200 MHz时测得4.3/3.3 dB的双边带噪声系数(NF).在1.2 V的供电电压下,所设计芯片功耗仅为8.4 mW.

     

    Abstract: A low-noise active down-conversion mixerwith a current-source switch stageis proposed. Large sinusoidal LO(Local Oscillator) signal driving is used to avoid the traditional RF port noise transferring by LO harmonics. An LC resonance tank structure is exploited to mitigate the high-frequency limitation by the tail parasitic capacitances charging and discharging behavior. Implemented in a 65nm CMOS process, the proposed mixer prototype operates at an RF dual-band of 5.2 GHz and provides a maximal conversion gain of 11.6dB andinput third-order intercept point (IIP3) of 5.5dBm. For 5.2 GHz LO, the dual side-band noise figure of 4.3/3.3dB is measured at fIF =10/200 MHz, respectively. The mixer core only consumes 8.4mW from a 1.2V supply voltage.

     

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