Abstract:
A discontinuous field plate with a polarization layer structure was proposed to improve the breakdown voltage of the depletion-mode AlGaN/GaN HEMT, and the mechanism of the increase of breakdown voltage was analyzed and explained. The breakdown voltage of the normally on AlGaN/GaN HEMT increased from 1187V when there was only a single field plate to 1573V. The new structure can ensure the normal operation of AlGaN/GaN HEMT under high voltage conditions and greatly improve the breakdown performance of the device.