李昕宇, 冯全源, 陈飞, 文彦, 黄进文. 一种具有间断场板和栅下极化层的AlGaN/GaN HEMT器件[J]. 微电子学与计算机, 2021, 38(12): 80-85. DOI: 10.19304/J.ISSN1000-7180.2021.0311
引用本文: 李昕宇, 冯全源, 陈飞, 文彦, 黄进文. 一种具有间断场板和栅下极化层的AlGaN/GaN HEMT器件[J]. 微电子学与计算机, 2021, 38(12): 80-85. DOI: 10.19304/J.ISSN1000-7180.2021.0311
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LI Xinyu, FENG Quanyuan, CHEN Fei, WEN Yan, HUANG Jinwen. An AlGaN/GaN HEMT device with a discontinuous field plate and a polarization layer below gate[J]. Microelectronics & Computer, 2021, 38(12): 80-85. DOI: 10.19304/J.ISSN1000-7180.2021.0311
Citation: LI Xinyu, FENG Quanyuan, CHEN Fei, WEN Yan, HUANG Jinwen. An AlGaN/GaN HEMT device with a discontinuous field plate and a polarization layer below gate[J]. Microelectronics & Computer, 2021, 38(12): 80-85. DOI: 10.19304/J.ISSN1000-7180.2021.0311
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一种具有间断场板和栅下极化层的AlGaN/GaN HEMT器件

An AlGaN/GaN HEMT device with a discontinuous field plate and a polarization layer below gate

    摘要
  • 摘要: 为提高器件的击穿电压，提出了一种具有间断场板和栅下极化层结构的常开型AlGaN/GaN HEMT.分析了器件击穿电压提高的机理.优化了器件结构参数.结果表明，该常开型AlGaN/GaN HEMT的击穿电压从仅有单一场板时的1187V提升到了1573V.该新型结构能够保证AlGaN/GaN HEMT在高压条件下正常工作，极大地提高了器件的击穿性能.

     

    Abstract: A discontinuous field plate with a polarization layer structure was proposed to improve the breakdown voltage of the depletion-mode AlGaN/GaN HEMT, and the mechanism of the increase of breakdown voltage was analyzed and explained. The breakdown voltage of the normally on AlGaN/GaN HEMT increased from 1187V when there was only a single field plate to 1573V. The new structure can ensure the normal operation of AlGaN/GaN HEMT under high voltage conditions and greatly improve the breakdown performance of the device.

     

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