Abstract:
For the degradation of saturated output current value of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) devices caused by high temperature, the high temperature characteristics of SOI (Silicon-On-Insulator) process devices are analyzed. The results show that the saturated output current of FDSOI varies with temperature ΔI/I = 1.9%, much smaller than PDSOI's ΔI/I = 24.1%. The reason for this is that the structural advantage of the ultra-thin FD (Full Depletion) SOI results in lower threshold voltage temperature drift and smaller carrier mobility change compared with the PD (Partial Depletion) SOI.
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