Abstract: The traditional FLASH NAND bad block information storage method is analysed, and the vulnerabilities and a high reliable bad block table storage scheme are given out. An xxx area was used to store the bad block address information separately instead of using the spare area of NAND FLASH to store the information by every page. There are two copies for the bad block information to guarantee the validity of it. The experiment shows that the scheme can locate the correct information when a bad block occurs in the reserved area or information store failed or information loss partly.And the SSR will still be able to get the correct information under those severe circumstances.